Device
V
Z
(V)
Z
Z
(
)
I
ZT
(mA)
I
R1
(
A)
V
R
(V)
I
R2
(
A)
V
R
T
A
=150
C
(V)
T
C
(%/
C)
I
ZM
*
(mA)
1N746A
1N747A
1N748A
1N749A
1N750A
3.3
3.6
3.9
4.3
4.7
28
24
23
22
19
20
20
20
20
20
10
10
10
2.0
2.0
1.0
1.0
1.0
1.0
1.0
30
30
30
30
30
1.0
1.0
1.0
1.0
1.0
- 0.070
- 0.065
- 0.060
+/- 0.055
+/- 0.030
110
100
95
85
75
1N751A
1N752A
1N753A
1N754A
5.1
5.6
6.2
6.8
17
11
7.0
5.0
20
20
20
20
1.0
1.0
0.1
0.1
1.0
1.0
1.0
1.0
20
20
20
20
1.0
1.0
1.0
1.0
+/- 0.030
+ 0.038
+ 0.045
+ 0.050
70
65
60
55
1N755A
1N756A
1N757A
1N758A
1N759A
7.5
8.2
9.1
10
12
6.0
8.0
10
17
30
20
20
20
20
20
0.1
0.1
0.1
0.1
0.1
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
1.0
1.0
1.0
1.0
1.0
+ 0.058
+ 0.062
+ 0.068
+ 0.075
+ 0.077
50
45
40
35
38
1N746A - 1N759A Series Half Watt Zeners
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
Tolerance: A = 5%
Electrical Characteristics
TA = 25C unless otherwise noted
@
@
@
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
*
IZM (Maximum Zener Current Rating) Values shown are based on the JEDEC rating of 400 milliwatts. Where the actual zener voltage (VZ) is known
at the operating point, the maximum zener current may be increased and is limited by the derating curve.
Parameter
Value
Units
Storage Temperature Range
-65 to +200
C
Maximum Junction Operating Temperature
+ 175
C
Lead Temperature (1/16" from case for 10 seconds)
+ 230
C
Total Device Dissipation
Derate above 25
C
500
3.33
mW
mW/
C
1N746A - 1N759A Series
DO-35
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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